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| 型号： | FDN342P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2A SSOT-3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Wire Bonding Change 07/Nov/2008 Mold Compound Change 08/April/2008 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 635pF @ 10V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 其它名称： | FDN342PDKR |
Electrical Characteristics
T A = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
V GS = 0 V, I D = -250 μ A
I D = -250 μ A,Referenced to 25 ° C
-20
-16
V
mV/ ° C
? T J
Coefficient
I DSS
I GSSF
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
V DS = -16 V, V GS = 0 V
V GS = 12 V, V DS = 0 V
-1
100
μ A
nA
Forward
I GSSR
Gate-Body Leakage Current,
V GS = -12 V, V DS = 0 V
-100
nA
Reverse
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
Gate Threshold Voltage
Gate Threshold Voltage
V DS = V GS , I D = -250 μ A
I D = -250 μ A,Referenced to 25 ° C
-0.6
-1.05
3
-1.5
V
mV/ ° C
? T J
Temperature Coefficient
R DS(on)
Static Drain-Source
On-Resistance
V GS = -4.5 V, I D = -2 A
V GS = -4.5 V, I D = -2 A,T J =125 ° C
0.062
0.086
0.08
0.14
?
V GS = -2.5 V, I D = -1.5 A
0.099
0.13
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = -4.5 V, V DS = -5 V
V DS = -5 V, I D = -5 A
-5
7
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V
f = 1.0 MHz
635
175
75
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -10 V, I D = -1 A
V GS = -4.5 V, R GEN = 6 ?
V DS = -10 V, I D = -2 A
V GS = -4.5 V,
20
8
9
19
6.3
1.5
1.7
35
16
18
32
9
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-0.42
A
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = -0.42 A
(Note 2)
-0.7
-1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 250 ° C/W when mounted
on a 0.02 in 2 pad of 2 oz. Cu.
b) 270 ° C/W when mounted
on a mininum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDN342P Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN342P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN352AP | 功能描述:MOSFET SINGLE PCH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN352AP_0508 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, PowerTrench MOSFET |
| FDN352AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN352AP Series 30 V 180 mOhm Single P-Channel PowerTrench Mosfet SSOT-3 |
| FDN357N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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