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| 型号： | FDN352AP |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 1.3A SSOT-3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 1.3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN352APDKR |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature Coef?cient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V DS = –24 V, V GS = 0 V
V GS = ± 25 V, V DS = 0 V
–30
–17
–1
± 100
V
mV/ ° C
μ A
nA
On Characteristics (Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coef?cient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –10 V, I D = –1.3 A
–0.8
–2.0
4
150
–2.5
180
V
mV/ ° C
m ?
On–Resistance
V GS = –4.5 V, I D = –1.1 A
V GS = –4.5 V, I D = –1.1 A, T J = 125 ° C
250
330
300
400
g FS
Forward Transconductance
V DS = –5 V, I D = –0.9 A
2.0
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –15 V, V GS = 0 V, f = 1.0 MHz
150
40
20
pF
pF
pF
Switching Characteristics (Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V DD = –10 V, I D = –1 A,
V GS = –10 V, R GEN = 6 ?
V DS = –10V, I D = –0.9 A,
V GS = –4.5 V
4
15
10
1
1.4
0.5
0.5
8
28
18
2
1.9
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–0.42
A
V SD
t rr
Q rr
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V GS = 0 V, I S = –0.42 A
I F = –3.9 A,
dI F /dt = 100 A/μs
(Note 2)
–0.8
17
7
–1.2
V
ns
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is de?ned as the solder mounting
surface of the drain pins R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
(a) R θ JA = 250°C/W when mounted on a 0.02 in 2 pad of 2oz. copper.
(b) R θ JA = 270°C/W when mounted on a 0.001 in 2 pad of 2oz. copper.
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDN352AP Rev. C1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDN357N | MOSFET N-CH 30V 1.9A SSOT3 |
| FDN358P | MOSFET P-CH 30V 1.5A SSOT3 |
| FDN359BN | MOSFET N-CH 30V 2.7A 3SSOT |
| FDN360P | MOSFET P-CH 30V 2A SSOT3 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN352AP_0508 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, PowerTrench MOSFET |
| FDN352AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN352AP Series 30 V 180 mOhm Single P-Channel PowerTrench Mosfet SSOT-3 |
| FDN357N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 60 MO SSOT3 |
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