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| 型号： | FDN357N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.9A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.9nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 235pF @ 10V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN357NDKR |
Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
? BV DSS / ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V DS = 24 V, V GS = 0 V
T J = 55°C
V GS = 20 V,V DS = 0 V
V GS = -20 V, V DS = 0 V
30
36
1
10
100
-100
V
mV/ o C
μA
μA
nA
nA
ON CHARACTERISTICS
(Note)
V GS(th)
? V GS(th) / ? T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V GS = 4.5 V, I D = 1.9 A
1
1.6
-3.6
0.081
2
0.09
V
mV/ o C
?
V GS = 10 V, I D = 2.2 A
T J =125°C
0.11
0.053
0.14
0.06
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 1.9 A
5
5
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
235
145
50
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DS = 10 V, I D = 1.9 A,
V GS = 5 V
5
12
12
3
4.2
1.3
1.7
10
22
22
8
5.9
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.42 A
(Note)
0.71
1.2
V
Note:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
Typical R θ JA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment :
a. 250 o C/W when mounted on
a 0.02 in 2 pad of 2oz Cu.
b. 270 o C/W when mounted on
a 0.001 in 2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDN357N Rev.C
相关PDF资料 |
PDF描述 |
|---|---|
| FDN358P | MOSFET P-CH 30V 1.5A SSOT3 |
| FDN359BN | MOSFET N-CH 30V 2.7A 3SSOT |
| FDN360P | MOSFET P-CH 30V 2A SSOT3 |
| FDN361BN | MOSFET N-CH 30V 1.4A SSOT3 |
| FDN372S | MOSFET N-CH 30V 2.6A SSOT-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 60 MO SSOT3 |
| FDN357N_Q | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN358 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN358P | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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