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| 型号： | FDN372S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.6A SSOT-3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Wire Bonding Change 07/Nov/2008 Mold Compound Change 08/April/2008 Product Discontinuation 27/Feb/2012 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 2.6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 8.1nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 630pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 1 mA
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 10 mA, Referenced to 25 ° C
24
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ±16 V,
V GS = 0 V
V DS = 0 V
500
±100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 1 mA
1
1.4
3
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 10 mA, Referenced to 25 ° C
–3.2
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS = 10 V, I D = 2.6 A
V GS = 4.5 V, I D = 2.3 A
32
36
40
50
m ?
V GS = 10V, I D = 2.6 A, T J = 125 ° C
45
60
I D(on)
On–State Drain Current
V GS = 10 V, V DS = 5 V
10
A
g FS
Forward Transconductance
V DS = 10V,
I D = 2.6 A
15
S
Dynamic Characteristics
C iss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV
V GS = 0 V,
f = 1.0 MHz
630
115
45
2.4
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15 V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 2.6 A,
7
5
21
2.7
5.8
1.3
1.2
14
10
34
5.4
8.1
1.9
1.7
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
0.7
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 0.7 A
(Note 2)
440
700
mV
Voltage
trr
Diode Reverse Recovery Time
I F = 2.6 A,
10
ns
Qrr
Diode Reverse Recovery Charge
d iF /d t = 300 A/μs
(Note 2)
4
nC
Notes:
1.
R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 250 ° C/W when mounted on a
0.02 in 2 pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
b) 270°C/W when mounted on a
minimum pad.
2.
Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDN372S Rev C(W)
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相关代理商/技术参数 |
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| FDN372S_F095 | 制造商:Fairchild 功能描述:30V/16V, 40/50MO, NCH, SYNCFET |
| FDN372S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN537N | 功能描述:MOSFET 30V Single N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN5618 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET |
| FDN5618P | 功能描述:MOSFET SSOT-3 P-CH 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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