参数资料
型号: FDP050AN06A0
厂商: Fairchild Semiconductor
文件页数: 11/13页
文件大小: 0K
描述: MOSFET N-CH 60V 80A TO-220AB
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: MOSFET TO-220AB
标准包装: 400
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 5 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 80nC @ 10V
输入电容 (Ciss) @ Vds: 3900pF @ 25V
功率 - 最大: 245W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 散装
产品目录页面: 1605 (CN2011-ZH PDF)
Mechanical Dimensions
TO-220 3L
Figure 2 2 . TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
? 2003 Fairchild Semiconductor Corporation
FDP050AN06A0 / FDB050AN06A0 Rev. C 2
11
www.fairchildsemi.com
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