参数资料
型号: FDP050AN06A0
厂商: Fairchild Semiconductor
文件页数: 4/13页
文件大小: 0K
描述: MOSFET N-CH 60V 80A TO-220AB
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: MOSFET TO-220AB
标准包装: 400
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 5 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 80nC @ 10V
输入电容 (Ciss) @ Vds: 3900pF @ 25V
功率 - 最大: 245W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 散装
产品目录页面: 1605 (CN2011-ZH PDF)
Typical Characteristics T C = 25°C unless otherwise noted
1000
500
If R = 0
100
10 μ s
100 μ s
100
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
OPERATION IN THIS
1ms
STARTING T J = 25 o C
10
AREA MAY BE
LIMITED BY r DS(ON)
10ms
10
1
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
1
STARTING T J = 150 o C
1
10
100
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
160
V GS = 7V
120
80
V DD = 15V
T J = 175 o C
120
80
V GS = 10V
V GS = 6V
40
T J = 25 o C
T J = -55 o C
40
V GS = 5V
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
4.0
4.5
5.0
5.5
6.0
0
0
0.5
1.0
1.5
8
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
2.0
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
7
1.5
6
1.0
5
V GS = 10V
4
0
20
40
I D , DRAIN CURRENT (A)
6 0
80
0.5
-80
-40
V GS = 10V, I D =80A
0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C)
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 200 3 Fairchild Semiconductor Corporation
FDP050AN06A0 / FDB050AN06A0 Rev. C 2
4
www.fairchildsemi.com
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