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参数资料
| 型号： | FDP3682 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 32A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 32A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1250pF @ 25V |
| 功率 - 最大： | 95W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FDP 3682
Device
FDP 3682
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
100
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 80V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
-
4
V
I D =32A, V GS =10V
-
0.032
0.036
r DS(ON)
Drain to Source On Resistance
I D = 16A, V GS = 6V,
-
0.040
0.060
?
I D =32A, V GS =10V, T C =175 o C
-
0.080
0.090
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
-
1250
190
45
18.5
-
-
-
28
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 50V
I D = 32A
I g = 1.0mA
-
-
-
-
2.4
6.5
4.1
4.6
3.6
-
-
-
nC
nC
nC
nC
Resistive Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
9
83
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 50V, I D = 32A
V GS = 10V, R GS = 16 ?
-
-
-
-
46
26
32
-
-
-
-
87
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SD = 32A
I SD = 16A
I SD = 32A, dI SD /dt = 100A/ μ s
I SD = 32A, dI SD /dt = 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
55
90
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 0.27mH, I AS = 20A.
2: Pulse Width = 100s
? 200 2 Fairchild Semiconductor
Corporation FDP3682 Rev. C2
2
www.fairchildsemi.com
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| FDP3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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| FDP3682_SB82034 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDP-36-T | 功能描述:集管和线壳 36pos. DIP Plug .100 x .600 RoHS:否 产品种类:1.0MM Rectangular Connectors 产品类型:Headers - Pin Strip 系列:DF50 触点类型:Pin (Male) 节距:1 mm 位置/触点数量:16 排数:1 安装风格:SMD/SMT 安装角:Right 端接类型:Solder 外壳材料:Liquid Crystal Polymer (LCP) 触点材料:Brass 触点电镀:Gold 制造商:Hirose Connector |
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