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| 型号： | FDP65N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 65A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 65A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 32.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2170pF @ 25V |
| 功率 - 最大： | 135W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Device Marking
FDP65N06
Device
FDP65N06
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 60 V, V GS = 0 V
V DS = 48 V, T C = 125°C
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
60
-
-
-
-
-
-
0.5
-
-
-
-
-
-
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 32.5 A
V DS = 40 V, I D = 32.5 A
2.0
-
-
-
0.013
39
4.0
0.016
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
-
-
-
1670
464
35
2170
600
52
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 30 V, I D = 65A,
R G = 25 ?
V DS = 48 V, I D = 65A,
V GS = 10 V
(Note 4)
(Note 4)
-
-
-
-
-
-
-
24
94
98
52
33
10
11
58
200
210
114
43
-
-
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
-
-
-
-
65
260
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 65 A
V GS = 0 V, I S = 65 A,
dI F / dt = 100 A/ μ s
-
-
-
-
62
132
1.4
-
-
V
ns
nC
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature .
2. L = 47 μ H, I AS = 65 A, V DD = 50 V, R G = 25 ?, Starting T J = 25°C .
3. I SD ≤ 65 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, Starting T J = 25°C .
4. Essentially independent of operating temperature .
?2006 Fairchild Semiconductor Corporation
FDP65N06 Rev. C0
2
www.fairchildsemi.com
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