- 您现在的位置：买卖IC网 > Datasheet目录424 > FDP8447L (Fairchild Semiconductor)MOSFET N-CH 40V 12A TO-220 Datasheet资料下载
参数资料
| 型号： | FDP8447L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 12A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.7 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 49nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2500pF @ 20V |
| 功率 - 最大： | 2W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V DS = 32V,
V GS = ±20V, V DS = 0V
40
34
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
1
1.7
-6
3
V
mV/°C
V GS = 10V, I D = 14A
7.7
8.7
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5V, I D = 11A
8.9
11.2
m ?
V GS = 10V, I D = 14A, T J = 125°C
12.1
13.7
g FS
Forward Transconductance
V DD = 5V, I D = 14A
74
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 20V, V GS = 0V,
f = 1MHz
f = 1MHz
1880
245
150
1.4
2500
325
225
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 20V, I D = 14A,
V GS = 10V, R GEN = 6 ?
9
7
28
4
18
14
45
10
ns
ns
ns
ns
Q g
Q g
Q gs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
V GS = 0V to 10V
V GS = 0V to 5V
V DD = 20V,
I D = 14A
35
19
4.7
49
27
nC
nC
nC
Q gd
Gate to Drain “Miller” Charge
6.2
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 14A
(Note 2)
0.8
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 14A, di/dt = 100A/ μ s
28
22
42
33
ns
nC
NOTES:
1. R θ JA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user ’s board design.
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3. Starting T J = 25°C, L = 1mH, I AS = 17.5A, V DD = 40V, V GS = 10V.
?2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDP8860 | MOSFET N-CH 30V 80A TO-220AB |
| FDP8870_F085 | MOSFET N-CH 30V 156A TO-220 |
| FDP8874 | MOSFET N-CH 30V 114A TO-220AB |
| FDP8876 | MOSFET N-CH 30V 70A TO-220 |
| FDP8880 | MOSFET N-CH 30V 54A TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP8447L | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process |
| FDP8860 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8870_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8870_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 156A, 4.1mW |
发布紧急采购，3分钟左右您将得到回复。