参数资料
型号: FDPF390N15A
厂商: Fairchild Semiconductor
文件页数: 1/9页
文件大小: 0K
描述: MOSFET N-CH 150V 15A TO-220F
标准包装: 50
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 18.6nC @ 10V
输入电容 (Ciss) @ Vds: 1285pF @ 75V
功率 - 最大: 22W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
December 2013
FDPF390N15A
N-Channel PowerTrench ? MOSFET
15 0 V, 15 A, 40 m Ω
Features
? R DS(on) = 31 m ? (Typ.) @ V GS = 10 V, I D = 15 A
? Fast Switching Speed
? Low Gate Charge, Q G = 14.3 nC (Typ.)
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance d PowerTrench ? process that has
been tailored to minimize the on-state resistance while
maintain-ing superior switching performance.
Applications
? Consumer Appliances
? LED TV
? Synchronous Rectification
? Uninterruptible Power Supply
? Motor Solar Inverter
D
D
G
S
Absolute Maximum Ratings
TO-220F
T C = 25°C unless otherwise noted .
G
S
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
FDPF390N15A
150
±20
Unit
V
V
I D
Drain Current
- Continuous (T C = 25 o C,Silicon Limited)
- Continuous (T C = 100 o C,Silicon Limited)
15
10
A
I DM
Drain Current
- Pulsed
(Note 1)
60
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 3)
78
6.0
22
0.18
mJ
V /ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds .
-55 to +175
300
o C
o C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF390N15A
5.7
62.5
Unit
o C/W
?20 11 Fairchild Semiconductor Corporation
FDPF390N15A Rev C 1
1
www.fairchildsemi.com
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