- 您现在的位置：买卖IC网 > Datasheet目录425 > FDS3672 (Fairchild Semiconductor)MOSFET N-CH 100V 7.5A 8-SOIC Datasheet资料下载
参数资料
| 型号： | FDS3672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 7.5A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 37nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2015pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS3672DKR |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
100
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 80V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
-
4
V
I D = 7.5A, V GS = 10V
-
0.019
0.023
r DS(ON)
Drain to Source On Resistance
I D = 6.8A, V GS = 6V
I D = 7.5A, V GS = 10V,
T C = 150 o C
-
-
0.023
0.035
0.028
0.043
?
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
-
2015
285
70
28
-
-
-
37
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 50V
I D = 7.5A
I g = 1.0mA
-
-
-
-
4
10
6.8
6
6
-
-
-
nC
nC
nC
nC
Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
14
51
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 50V, I D = 4A
V GS = 10V, R GS = 10 ?
-
-
-
-
20
37
27
-
-
-
-
96
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 7.5A
I SD = 4A
I SD = 7.5A, dI SD /dt= 100A/ μ s
I SD = 7.5A, dI SD /dt= 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
55
90
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 13mH, I AS = 8A.
2: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user’s board design.
3: R θ JA is measured with 1.0 in 2 copper on FR-4 board
?2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2
相关PDF资料 |
PDF描述 |
|---|---|
| FDS3692 | MOSFET N-CH 100V 4.5A SO-8 |
| FDS3890 | MOSFET N-CH DUAL 80V 4.7A SO-8 |
| FDS3992 | MOSFET N-CH DUAL 100V 4.5A SO-8 |
| FDS4141_F085 | MOSFET P-CH 40V 10.8A 8-SOIC |
| FDS4141 | MOSFET P-CH 40V 10.8A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 100V, 7.5A, SOIC |
| FDS3672_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 7.5A, 22m?? |
| FDS3672_Q | 功能描述:MOSFET 100V 7.5a .22 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。