- 您现在的位置：买卖IC网 > Datasheet目录425 > FDS4410A (Fairchild Semiconductor)MOSFET N-CH 30V 10A 8SOIC Datasheet资料下载
参数资料
| 型号： | FDS4410A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 10A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1205pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
May 2005
FDS4410A
Single N - Channel, Logic-Level, PowerTrench ? MOSFET
Features
General Description
■ 10 A, 30 V.
R DS(ON) = 13.5 m ? @ V GS = 10 V
R DS(ON) = 20 m ? @ V GS = 4.5 V
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
■ Fast switching speed
■ Low gate charge
■ High performance trench technology for extremely low
R DS(ON)
■ High power and current handling capability
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D
D
5
4
D
D
6
3
SO-8
Pin 1
S
S
S
G
7
8
2
1
Absolute Maximum Ratings T A =25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain–Source Voltage
Gate–Source Voltage
Parameter
Ratings
30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
10
A
– Pulsed
50
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.0
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
° C/W
(Note 1b)
125
R θ JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
FDS4410A
?2005 Fairchild Semiconductor Corporation
Device
FDS4410A
Reel Size
13"
1
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS4410A Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| FDS4435BZ_F085 | MOSFET P-CH 30V 8-SOIC |
| FDS4435 | MOSFET P-CH 30V 8.8A 8-SOIC |
| FDS4465_F085 | MOSFET P-CH 20V 8-SOIC |
| FDS4465 | MOSFET P-CH 20V 13.5A 8-SOIC |
| FDS4470 | MOSFET N-CH 40V 12.5A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4435 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:30VP-CH. FET 20 MO SO8 TR :ROHS COMPL |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS4435_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench MOSFET |
| FDS4435_NL | 功能描述:MOSFET P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。