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| 型号： | FDS4410A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 10A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1205pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coef?cient
Zero Gate Voltage Drain Current
V GS = 0 V, I D = 250 μA
I D = 250 μA, Referenced to 25 ° C
V DS = 24 V, V GS = 0 V
30
25
1
V
mV/ ° C
μ A
V DS = 24 V, V GS = 0 V, T J = 55°C
10
I GSS
Gate–Body Leakage
V GS = ± 20 V, V DS = 0 V
± 100
nA
On Characteristics (Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coef?cient
Static Drain–Source On–Resistance
V DS = V GS , I D = 250 μA
I D = 250 μA, Referenced to 25 ° C
V GS = 10 V, I D = 10 A
1
1.9
–5
9.8
3
13.5
V
mV/ ° C
m ?
V GS = 4.5 V, I D = 9 A
V GS = 10 V, I D = 10 A, T J = 125 ° C
12.0
13.7
20
23
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 5 V, I D = 10 A
50
48
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V, f = 1.0 MHz
V GS = 15 mV, f = 1.0 MHz
1205
290
115
2.4
pF
pF
pF
?
Switching Characteristics (Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V DS = 15 V, I D = 1 A, V GS = 10 V,
R GEN = 6 ?
V DD = 15 V, I D = 10 A, V GS = 5 V
9
5
28
9
12
3.4
4.0
19
10
44
19
16
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V SD
t rr
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
V GS = 0 V, I S = 2.1 A
I F = 10A, d iF /d t = 100 A/μs
(Note 2)
0.74
24
1.2
V
nS
Q rr
Diode Reverse Recovery Charge
27
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is de?ned as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50°C/W when mounted on a
1 in 2 pad of 2 oz copper
b) 125°C/W when mounted on
a minimum pad.
Scale 1 : 1 on letter size paper
2. Test: Pulse Width < 300μs, Duty Cycle < 2.0%
FDS4410A Rev. B
2
www.fairchildsemi.com
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