参数资料
型号: FDS6675
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET P-CH 30V 11A 8-SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 11A
开态Rds(最大)@ Id, Vgs @ 25° C: 14 毫欧 @ 11A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 42nC @ 5V
输入电容 (Ciss) @ Vds: 3000pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FDS6675DKR
Typical Electrical Characteristics (continued)
10
6000
8
I D = -11A
V DS = -5V
-10V
4000
C iss
-15V
2000
6
4
2
1000
500
200
f = 1 MHz
V GS = 0 V
C oss
C rss
0
0
12
24
36
48
60
100
Q g , GATE CHARGE (nC)
0.1
0.2
0.5 1 2 5 10
- V DS , DRAIN TO SOURCE VOLTAGE (V)
20
30
Figure 7. Gate Charge Characteristics.
100
50
Figure 8. Capacitance Characteristics.
S(O
LIM
0u
1m
1 0 m
30
10
3
RD
N)
IT
1s
10
s
s
s
40
30
SINGLE PULSE
R θ JA =125°C/W
T A = 25°C
10
0.5
V GS = -10V
10
DC
s
0m
s
20
SINGLE PULSE
0.05
R θ JA = 125° C/W
T A = 2 5 ° C
10
0.01
0.05
0.1
0.3
1
3
10
30
50
0
0.001
0.01
0.1
1
10
100
300
- V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area .
1
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum Power
Dissipation.
0.5
D = 0.5
0.2
0.1
0.2
0.1
R θ JA (t) = r(t) * R θ JA
R θ JA = 125°C/W
0.05
0.02
0.01
0.05
0.02
0.01
Single Pulse
P(pk)
t 1
t 2
0.005
0.002
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 /t 2
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6675 Rev.C
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