参数资料
型号: FDS6676AS
厂商: Fairchild Semiconductor
文件页数: 6/8页
文件大小: 0K
描述: MOSFET N-CH 30V 14.5A 8-SOIC
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
系列: PowerTrench®, SyncFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 14.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 6 毫欧 @ 14.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 1mA
闸电荷(Qg) @ Vgs: 63nC @ 10V
输入电容 (Ciss) @ Vds: 2510pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: FDS6676ASDKR
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
T A = 125 o C
0.01
0.001
T A = 100 o C
0.0001
T A = 25 o C
0.00001
0
5
10 15 20
25
30
V DS , REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
10nS/DIV
Figure 12. FDS6676AS SyncFET body diode
leakage versus drain-source voltage and
temperature.
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
10nS/DIV
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
FDS6676AS Rev B 2
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相关代理商/技术参数
参数描述
FDS6676AS_0511 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET
FDS6676AS_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDS6676AS_G 制造商:Fairchild 功能描述:30V N-Channel PowerTrench SyncFET
FDS6676AS_NL 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET
FDS6676S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube