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| 型号： | FDS6699S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 21A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 21A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.6 毫欧 @ 21A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 91nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3610pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS6699SDKR |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coef?cient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V GS = 0 V, I D = 1 mA
I D = 1 mA, Referenced to 25 ° C
V DS = 24 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
30
28
500
±100
V
mV/ ° C
μ A
nA
On Characteristics (Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coef?cient
Static Drain–Source
V DS = V GS , I D = 1 mA
I D = 1 mA, Referenced to 25 ° C
V GS = 10 V, I D = 21 A
1
1.4
–3.2
3.0
3
3.6
V
mV/ ° C
m ?
On–Resistance
V GS = 4.5 V, I D = 19 A
V GS =10 V, I D =21 A, T J =15 0 ° C
3.6
4.6
4.5
5.6
g FS
Forward Transconductance
V DS = 10 V, I D = 21 A
100
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
3610
1080
340
4800
1435
680
pF
pF
pF
R G
Gate Resistance
V GS = 15 mV, f = 1.0 MHz
0.4
1.8
3.1
?
Switching Characteristics (Note 2)
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs = 10V
Total Gate Charge at Vgs = 5V
Gate–Source Charge
Gate–Drain Charge
V DD = 15 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DD = 15 V, I D = 21 A,
11
12
73
38
65
35
9
11
20
22
117
61
91
49
ns
ns
ns
ns
nC
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
V SD
t rr
I RM
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Current
V GS = 0 V, I S = 3.5 A
I F = 21 A,
d iF /d t = 300 A/μs
(Note 2)
(Note 3)
0.36
32
2.2
0.7
V
ns
A
Q rr
Diode Reverse Recovery Charge
35
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is de?ned as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50°/W when mounted
on a 1 in 2 pad of 2 oz
copper
b) 105°/W when mounted
on a .04 in 2 pad of 2 oz
copper
c) 125°/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. E AS of 541 mJ is based on starting T J = 25 ° C, L = 3 mH, I AS = 19 A, V DD = 30 V, V GS = 10 V. 100% test at L = 1 mH, I AS = 25 A.
FDS6699S Rev. D3 2
2
www.fairchildsemi.com
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