参数资料
型号: FDS6699S
厂商: Fairchild Semiconductor
文件页数: 4/6页
文件大小: 0K
描述: MOSFET N-CH 30V 21A 8SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
系列: PowerTrench®, SyncFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 21A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.6 毫欧 @ 21A,10V
Id 时的 Vgs(th)(最大): 3V @ 1mA
闸电荷(Qg) @ Vgs: 91nC @ 10V
输入电容 (Ciss) @ Vds: 3610pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: FDS6699SDKR
Typical Characteristics (continued)
10
I D = 21A
5000
f = 1MHz
V GS = 0 V
8
V DS = 10V
20V
4000
6
4
2
0
15V
3000
2000
1000
0
C rss
C oss
C iss
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
1000
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
R DS(ON) LIMIT
50
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
SINGLE PULSE
R θ JA = 125 ° C/W
100
100us
1ms
40
T A = 25 ° C
10
1
0.1
0.01
V GS = 10V
SINGLE PULSE
R θ JA = 125 ° C/W
T A = 25 ° C
DC
10s
10ms
100ms
1s
30
20
10
0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
t 1 , TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
R θ JA (t) = r(t) * R θ JA
R θ JA = 125 ° C/W
0.1
0.1
0.05
P(pk)
0.01
0.02
0.01
t 1
t 2
T J - T A = P * R θ JA (t)
0.001
SINGLE PULSE
Duty Cycle, D = t 1 /t 2
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6699S Rev. D3
4
www.fairchildsemi.com
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