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| 型号： | FDS8447 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 12.8A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.5 毫欧 @ 12.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 49nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2600pF @ 20V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS8447DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage I D = 250 μ A, V GS = 0V
40
V
? BV DSS
? T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, referenced to 25°C
V DS = 32V, V GS = 0V
T J = 55 ° C
V GS = ±20V, V DS = 0V
34
1
10
±100
mV/° C
μ A
μ A
nA
On Characteristics (Note 2)
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
1
1.8
-5
3
V
mV/°C
V GS = 10V, I D = 12.8A
9
10.5
r DS(on)
Drain to Source On Resistance
V GS = 4.5V, I D = 11.4A
10
12.3
m ?
V GS = 10V, I D = 12.8A,T J = 125°C
13
15
g FS
Forward Transconductance
V DS = 10V, I D = 12.8A
75.3
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 20V, V GS = 0V,
f = 1MHz
f = 1MHz
2000
250
150
1.3
2600
350
250
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at V GS = 10V
Total Gate Charge at V GS = 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V DD = 20V, I D = 12.8A
V GS = 10V, R GEN = 4.5 ?
V DS = 20V, I D = 12.8A,
11
14
27
7
35
19
6
7
20
25
42
14
49
27
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
V SD
Source to Drain Diode Forward Voltage V GS = 0V, I S = 12.8A (note 2)
0.84
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 12.8A, d iF /d t = 100A/ μ s
19
9.5
29
19
ns
nC
Notes:
1: R θ JA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R θ JC is guaranteed by design while R θ JA is determined by the user ’s board design.
a) 50°C/W when
mounted on a 1in 2
pad of 2 oz copper
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T J = 25 ° C, L = 3mH, I AS = 10A, V DD = 40V, V GS = 10V.
b) 125°C/W when mounted on a
minimum pad .
FDS8447 Rev.B
2
www.fairchildsemi.com
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| FDS8447-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS8447 Series N-Channel 40 V 10.5 mOhm PowerTrench Mosfet - SOIC-8 |
| FDS8449 | 功能描述:MOSFET 40V N-Ch UltraFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8449_F085 | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS86106 | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS86140 | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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