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参数资料
| 型号： | FDS8880 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 11.6A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 11.6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1235pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS8880DKR |
Typical Characteristics T J = 25°C unless otherwise noted
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
50
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
T J = 25 o C
30
10
STARTING T J = 25 o C
20
T J = 150 o C
T J = -55 o C
1
STARTING T J = 150 o C
10
0
0.01
0.1 1 10
100
1.5
2.0
2.5
3.0
3.5
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
50
50
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
40
30
20
V GS = 10V
V GS = 5V
V GS = 4V
V GS = 3V
40
30
20
I D = 11.6 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
10
T A = 25 o C
PULSE DURATION = 80 μ s
10
I D = 1A
DUTY CYCLE = 0.5% MAX
0
0
0.2
0.4
0.6
0.8
0
2
4
6
8
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.2
V GS = V DS , I D = 250 μ A
1.4
1.0
1.2
1.0
0.8
0.8
V GS = 10V, I D = 11.6A
0.6
0.6
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
T J , JUNCTION TEMPERATURE ( o C)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
?2007 Fairchild Semiconductor Corporation
FDS8880 Rev. B
5
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8880 | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process |
| FDS8880_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8880_F123 | 功能描述:MOSFET 30V N-CHAN 11.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8882 | 功能描述:MOSFET 30V 9A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8884 | 功能描述:MOSFET 30V N-Channel PwrTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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