参数资料
型号: FDS8984_F085
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 30V 8-SOIC
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 13nC @ 10V
输入电容 (Ciss) @ Vds: 635pF @ 15V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: FDS8984_F085DKR
Fabruary 20 1 0
FDS8984 _F085
N-Channel PowerTrench ? MOSFET
30V, 7A, 23m ?
tm
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(ON) and fast switching speed.
Features
Max r DS(on) = 23m ? , V GS = 10V, I D = 7A
Max r DS(on) = 30m ? , V GS = 4.5V, I D = 6A
Low gate charge
100% R G tested
Qualified to AEC Q101
RoHS Compliant
D D1
D D2
D D2
D D1
5
6
Q2
4
3
S1 S
SO-8
Pin 1 SO-8
G2
S2 G
G1 S
S
7
8
Q1
2
1
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±20
Units
V
V
I D
E AS
P D
T J , T STG
Drain Current Continuous
Pulsed
Single Pulse Avalache Energy
Power Dissipation for Single Operation
Derate above 25°C
Operating and Storage Temperature
(Note 1a)
(Note 2)
7
30
32
1.6
13
-55 to 150
A
A
mJ
W
mW/°C
°C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS8984
Device
FDS8984 _F085
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
?20 10 Fairchild Semiconductor Corporation
FDS8984 _F085 Rev. A
1
www.fairchildsemi.com
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