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参数资料
| 型号： | FDS8984_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8-SOIC |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 635pF @ 15V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS8984_F085DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to
25°C
30
23
V
mV/°C
I DSS
Zero Gate Voltage Drain Current
V DS = 24V
V GS = 0V
T J = 125°C
1
250
μ A
I GSS
Gate to Source Leakage Current
V GS = ±20V,V DS = 0V
±100
nA
On Characteristics (Note 3)
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 250 μ A
I D = 250 μ A, referenced to
25°C
1.2
1.7
- 4.3
2.5
V
mV/°C
V GS = 10V, I D = 7A
19
23
r DS(on)
Drain to Source On Resistance
V GS = 4.5V, I D = 6A
V GS = 10V, I D = 7A,
T J = 125°C
24
26
30
32
m ?
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15V, V GS = 0V,
f = 1.0MHz
f = 1MHz
475
100
65
0.9
635
135
100
1.6
pF
pF
pF
?
Switching Characteristics (Note 3)
t d(on)
Turn-On Delay Time
5
10
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 15V, I D = 7A
V GS = 10V, R GS = 33 ?
V DS = 15V, V GS = 10V,
I D = 7A
V DS = 15V, V GS = 5V,
I D = 7A
9
42
21
9.2
5.0
1.5
2.0
18
68
34
13
7
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I SD = 7A
I SD = 2.1A
I F = 7A, di/dt = 100A/ μ s
0.9
0.8
1.25
1.0
33
20
V
V
ns
nC
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user ’s board design.
3: Pulse Test:Pulse Width <300 μ s, Duty Cycle <2%.
a) 78°C/W when
mounted on a 0.5in 2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2: Starting T J = 25 ° C, L = 1mH, I AS = 8A, V DD = 27V, V GS = 10V.
FDS8984 _F085 Rev. A
b) 125°C/W when
mounted on a 0.02 in 2
pad of oz copper
2
c) 135°C/W when
mounted on a
minimun pad
www.fairchildsemi.com
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