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| 型号： | FDS9933BZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 4.9A 8-SOIC |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 4.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 985pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS9933BZDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 μ A, V GS = 0V
I D = -250 μ A, referenced to 25°C
V DS = -16V, V GS = 0V
V GS = ±12V, V DS = 0V
-20
-9
1
±10
V
mV/°C
μ A
μ A
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 μ A
I D = -250 μ A, referenced to 25°C
-0.4
-0.9
3
-1.5
V
mV/°C
V GS = -4.5V, I D = -4.9A
38
46
r DS(on)
Static Drain to Source On Resistance
V GS = -2.5V, I D = -4.0A
54
69
m ?
V GS = -4.5V, I D = -4.9A, T J = 125°C
52
67
g FS
Forward Transconductance
V DD = -10V, I D = -4.9A
17
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10V, V GS = 0V,
f = 1MHz
740
160
145
985
215
220
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = -10V, I D = -4.9A,
V GS = -4.5V, R GEN = 6 ?
V DD = -10V, I D = -4.9A
V GS = -4.5V
6.7
9.3
59
47
11
1.4
3.7
14
19
95
76
15
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum continuous Drain-Sourse Diode Forward Current
-1.3
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = -1.3A
(Note 2)
-0.8
-1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = -4.9A, di/dt = 100A/ μ s
46
23
74
37
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 78°C/W when mounted on a 1 in 2
pad of 2 oz copper
b) 135°C/W when mounted on a
minimun pad
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
?2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
2
www.fairchildsemi.com
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