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参数资料
| 型号： | FDT439N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel 2.5V Specified EnhancementMode Field Effect Transistor |
| 中文描述： | 6.3 A, 30 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 289K |
| 代理商： | FDT439N |
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current, Forward
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
30
V
Breakdown Voltage Temperature
40
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
1
μ
A
nA
nA
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.4
0.67
-2.2
1
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 4.5 V, I
D
= 6.3 A
V
GS
= 4.5 V, I
D
= 6.3 A, T
J
=125
°
C
V
GS
= 2.5 V, I
D
= 5.5A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 6.3 A
0.038
0.055
0.048
0.045
0.072
0.058
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
10
A
S
17
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
500
185
43
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
6
10
30
10
10.7
0.9
3.7
12
18
48
18
15
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 6.3 A,
V
GS
= 4.5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
2.5
1.2
A
V
V
GS
= 0 V, I
S
= 2.5 A
(Note 2)
0.8
θ
θ
θ
!
≤
"##
μ
$%&
≤
'#(
)*'
°
&+!
'
),-
°
&+!
##..
'
)#
°
&+!
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相关代理商/技术参数 |
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|---|---|
| FDT439N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT439N_Q | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT457N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT457NJ23Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
| FDT458P | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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