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| 型号： | FDY1002PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V SC89-6 |
| 产品目录绘图： | MOSFET SC89-6 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 830mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 毫欧 @ 830mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 135pF @ 10V |
| 功率 - 最大： | 446mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SC-89 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDY1002PZDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = –250 μ A, V GS = 0 V
I D = –250 μ A, referenced to 25 °C
V DS = –16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
–20
-11
–1
±10
V
mV /° C
μ A
μ A
On Characteristics (Note 2)
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = –250 μ A
I D = –250 μ A, referenced to 25 °C
–0.4
–0.7
3
–1.0
V
mV/°C
V GS = –4.5 V, I D = –0.83 A
V GS = –2.5 V, I D = –0.70 A
0.28
0.36
0.5
0.7
r DS(on)
Static Drain to Source On-Resistance
V GS = –1.8 V, I D = –0.43 A
V GS = –1.5 V, I D = –0.36 A
0.47
0.62
1.2
1.8
?
V GS = –4.5 V, I D = –0.83 A,
T J =125 °C
0.39
0.85
g FS
Forward Transconductance
V DD = –5 V, I D = –0.83 A
2
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V, V GS = 0 V,
f = 1 MHz
100
23
18
135
35
30
pF
pF
pF
Switching Characteristics (Note 2)
t d(on)
Turn-On Delay Time
3.5
10
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = –10 V, I D = –0.83 A
V GS = –4.5 V, R GEN = 6 ?
V DD = –10 V, I D = –0.83 A
V GS = –4.5 V
2.9
23
13
2.2
0.3
0.6
10
37
23
3.1
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Rating
I S
Maximum Continuous Drain-Source Diode Forward Current
–0.52
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = –0.52 A
(Note 2)
–1.0
–1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = –0.83 A, dI F /dt = 100 A/ μ s
18
3.8
31
10
ns
nC
Notes:
1. R θ JA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ JA is determined by the
user's board design.
a) 200 o C/W when mounted on
a 1 in 2 pad of 2 oz copper.
b) 280 o C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDY1002PZ Rev.B1
2
www.fairchildsemi.com
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