- 您现在的位置：买卖IC网 > Datasheet目录429 > FDZ193P (Fairchild Semiconductor)MOSFET P-CH 20V 3A 8-WLCSP Datasheet资料下载
参数资料
| 型号： | FDZ193P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A 8-WLCSP |
| 产品目录绘图： | 6-WL-CSP Package |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFBGA，WLCSP |
| 供应商设备封装： | 6-WLCSP |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDZ193PDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 A, V GS = 0V
I D = -250 A, referenced to 25°C
V DS = -16V, V GS = 0V
V GS = ±12V, V GS = 0V
-20
-11
-1
±100
V
mV/° C
A
nA
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 A
I D = -250 A, referenced to 25°C
-0.6
-0.9
3
-1.5
V
mV/°C
V GS = -4.5V, I D = -1A
66
90
r DS(on)
Drain to Source On Resistance
V GS = -2.5V, I D = -1A
V GS = -1.7V, I D = -1A
92
195
130
300
m
V GS = -4.5V, I D = -1A T J = 125°C
84
123
I D(on)
g FS
On to State Drain Current
Forward Transconductance
V GS = -4.5V, V DS = -5V
V DS = -5V, I D = -1A
-10
5.6
A
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = -10V, V GS = 0V,
f = 1MHz
f = 1MHz
660
150
90
9.5
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = -10V, I D = -1A
V GS = -4.5V, R GEN = 6
V GS = 0V to 10V V DD = -10V
I D = -1A
13
10
28
21
7
1
2
23
20
45
34
10
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum continuous Drain-Source Diode Forward Current
-1.1
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = -1.1A
(Note 2)
-0.7
-1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = -1A, di/dt = 100A/ s
19
6
ns
nC
Notes:
1: R JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
side of the solder ball, R JB is defined for reference. For R JC the thermal reference point for the case is defined as the top surface of the copper chip carrier. R JC and R JB
are guaranteed by design while R JA is determined by the user's board design.
a. 65°C/W when mounted on
a 1 in 2 pad of 2 oz copper,1.5”
X 1.5” X 0.062” thick PCB
2: Pulse Test: Pulse Width < 30 0 s, Duty cycle < 2.0%.
b. 133°C/W when mounted on a
minimum pad of 2 oz copper
FDZ193P Rev.C2 (W)
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDZ197PZ | MOSFET P-CH 20V 3.8A 6-WLCSP |
| FDZ371PZ | MOSFET P-CH 20V 3.7A WLCSP |
| FDZ375P | MOSFET P-CH 20V WLCSP 1X1 |
| FDZ391P | MOSFET P-CH 20V 3A 6-WLCSP |
| FDZ3N513ZT | MOSFET N-CH 30V WLCSP 2X2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDZ197PZ | 功能描述:MOSFET P-Ch 1.5V Specified PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ201N | 功能描述:MOSFET 20V/12V NChannel BGa RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ201N_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel 2.5V Specified PowerTrench BGA MOSFET |
| FDZ201N_Q | 功能描述:MOSFET 20V/12V NChannel BGa RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ202P | 功能描述:MOSFET 20V/12V P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。