参数资料
型号: FDZ193P
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET P-CH 20V 3A 8-WLCSP
产品目录绘图: 6-WL-CSP Package
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3A
开态Rds(最大)@ Id, Vgs @ 25° C: 90 毫欧 @ 1A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 10nC @ 10V
输入电容 (Ciss) @ Vds: 660pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 6-UFBGA,WLCSP
供应商设备封装: 6-WLCSP
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDZ193PDKR
Typical Characteristics T J = 25°C unless otherwise noted
16
2.0
14
12
V GS = -4.5V
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
V GS = -3V
1.8
V GS = -2V
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
10
8
6
4
2
V GS = -3.5V
V GS = -2.5V
V GS = -2V
1.6
1.4
1.2
1.0
V GS = -2.5V
V GS = -3V
V GS = -3.5V
V GS = -4.5V
0
V GS = -1.7V
0.8
0.0
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4 6 8 10
12
14
16
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.4
-I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
240
1.3
I D = -1A
V GS = -4.5V
200
I D = -1A
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
1.2
160
1.1
1.0
0.9
0.8
120
80
40
T J = 25 o C
T J = 125 o C
-50
-25
0 25 50 75 100 125
150
1.5
2.0 2.5 3.0 3.5 4.0 4.5
5.0
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
16
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
14
12
10
8
6
4
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
V DD = -5V
T J = 125 o C
T J = 25 o C
1
0.1
0.01
1E-3
V GS = 0V
T J = 125 o C
T J = 25 o C
T J = -55 o C
2
0
T J = -55 o C
1E-4
0.0
0.5 1.0 1.5 2.0 2.5
3.0
0.2
0.4 0.6 0.8 1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDZ193P Rev.C2 (W)
3
www.fairchildsemi.com
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