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参数资料
| 型号： | FGD3N60LSDTF |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封装： | D-PAK, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 848K |
| 代理商： | FGD3N60LSDTF |
4
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Figure 6. Capacitance Characteristics
0
2
4
6
8
0
6
12
18
24
30
20V
15V
10V
V
GE
= 8V
Common Emitter
T
C
= 25
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
0
2
Collector-Emitter Voltage, V
CE
[V]
4
6
8
0
6
12
18
24
30
Common Emitter
T
C
= 125
°
C
V
GE
= 8V
20V
15V
10V
C
C
1
10
0
2
4
6
8
10
C
C
Common Emitter
V
CE
= 20V
T
C
= 25
°
C
T
C
= 125
°
C
Gate-Emitter Voltage, V
GE
[V]
0.1
1
10
0
2
4
6
8
10
Collector-Emitter Voltage, V
CE
[V]
C
C
Common Emitter
V
GE
= 10V
T
C
= 25
°
C
T
C
= 125
°
C
0
30
60
90
120
150
0
1
2
3
I
C
= 6A
I
C
= 3A
I
C
= 1.5A
Common Emitter
V
GE
= 10V
C
C
Case Temperature, T
C
[
°
C]
1
10
0
100
200
300
400
500
600
Cres
Coes
Cies
Collector - Emitter Voltage, V
CE
[V]
C
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
°
C
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相关代理商/技术参数 |
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| FGD3N60LSDTM | 功能描述:IGBT 晶体管 600V IGBT HID Application RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGD3N60UNDF | 功能描述:IGBT 晶体管 600V, 3A Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGD4536 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:360V, PDP IGBT |
| FGD4536TM | 功能描述:IGBT 晶体管 360V PDP IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGD4536TM_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 360V 125W DPAK |
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