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参数资料
| 型号： | FGD3N60LSDTF |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封装： | D-PAK, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 848K |
| 代理商： | FGD3N60LSDTF |
5
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Gate Charge
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
200
400
600
800 1000
10
100
1000
Common Emitter
V
CC
= 480V, V
GE
= 10V
I
C
= 3A
T
C
= 25
°
C
T
C
= 125
°
C
Ton
Tr
S
Gate Resistance, R
G
[
]
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Common Emitter
R
L
= 160
Vcc = 480V
T
C
= 25
°
C
G
G
Gate Charge, Q
g
[nC]
200
Gate Resistance, R
G
[
]
400
600
800 1000
100
1000
10000
Toff
Tf
S
Common Emitter
V
CC
= 480V, V
GE
= 10V
I
C
= 3A
T
C
= 25
°
C
T
C
= 125
°
C
200
Gate Resistance, R
G
[
]
400
600
800 1000
10
100
1000
10000
S
μ
J
Eon
Eoff
Common Emitter
V
CC
= 480V, V
GE
= 10V
I
C
= 3A
T
C
= 25
°
C
T
C
= 125
°
C
2
4
10
100
Tr
Ton
S
Collector Current, I
C
[A]
Common Emitter
Vcc = 480V, V
GE
= 10V
R
G
= 470
T
C
= 25
°
C
T
C
= 125
°
C
2
4
100
1000
S
Tf
Toff
Collector Current, I
C
[A]
Common Emitter
Vcc = 480 V, V
GE
= 10V
R
G
= 470
T
C
= 25
°
C
T
C
= 125
°
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGD3N60LSDTM | 功能描述:IGBT 晶体管 600V IGBT HID Application RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGD3N60UNDF | 功能描述:IGBT 晶体管 600V, 3A Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGD4536 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:360V, PDP IGBT |
| FGD4536TM | 功能描述:IGBT 晶体管 360V PDP IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGD4536TM_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 360V 125W DPAK |
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