参数资料
型号: FGD3N60LSDTF
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: IGBT 晶体管
英文描述: IGBT
中文描述: 6 A, 600 V, N-CHANNEL IGBT
封装: D-PAK, 3 PIN
文件页数: 6/8页
文件大小: 848K
代理商: FGD3N60LSDTF
6
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Forward Characteristics
Figure 15. Forward Voltage Drop Vs Tj
Figure 16. SOA Characteristics
Figure 17. Transient Thermal Impedance of IGBT
0
1
2
3
4
0.1
1
10
100
F
F
[
Forward Voltage Drop, V
F
[V]
Tc = 25
°
C
Tc = 100
°
C
2
4
100
1000
Eon
Eoff
S
μ
J
Collector Curre3
C
[A]
Common Emitter
Vcc = 480 V, V
GE
= 10V
R
G
= 470
T
C
= 25
°
C
T
C
= 125
°
C
25
50
75
100
125
1.2
1.6
2.0
2.4
2.8
I
F
=3 A
I
F
=6 A
F
F
Junction Temperature, Tj [
°
C]
I
F
=1.5 A
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
μ
s
100
μ
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25
°
C
Curves must be derated
linearly with increase
in temperature
C
Collector - Emitter Voltage, V
CE
[V]
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
T
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
相关PDF资料
PDF描述
FGD3N60LSDTM IGBT
FGH20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP20N6S2D Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
FGB20N6S2DT 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
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