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参数资料
型号： FGI3236_F085
厂商： Fairchild Semiconductor
文件页数： 2/10页
文件大小： 0K
描述： IGBT IGNITION N-CH 360V I2PAK
产品变化通告： Product Obsolescence 13/Aug/2010
产品目录绘图： IGBT I2PAK Package
标准包装： 400
系列： EcoSPARK™
电压 - 集电极发射极击穿（最大）： 360V
Vge, Ic时的最大Vce（开）： 1.4V @ 4V，6A
电流 - 集电极 (Ic)（最大）： 44A
功率 - 最大： 187W
输入类型： 逻辑
安装类型： 通孔
封装/外壳： TO-262-3，长引线，I²Pak，TO-262AA
供应商设备封装： TO-262
包装： 管件
Device Maximum Ratings T A = 25°C unless otherwise noted
Symbol
BV CER
BV ECS
E SCIS25
Parameter
Collector to Emitter Breakdown Voltage (I C = 1mA)
Emitter to Collector Voltage - Reverse Battery Condition (I C = 10mA)
Self Clamping Inductive Switching Energy (I SCIS = 14.7A, L = 3.0mHy, T J = 25°C)
Ratings
360
24
320
Units
V
V
mJ
E SCIS150 Self Clamping Inductive Switching Energy (I SCIS = 10.4A, L = 3.0mHy, T J = 150°C)
160
mJ
C
C
C
C
I C25
I C110
V GEM
P D
T J
T STG
T L
T PKG
ESD
Collector Current Continuous, at V GE = 4.0V, T C = 25°C
Collector Current Continuous, at V GE = 4.0V, T C = 110°C
Gate to Emitter Voltage Continuous
Power Dissipation Total, at T C = 25°C
Power Dissipation Derating, for T C > 25 o C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
Max. Lead Temp. for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at100pF, 1500 ?
44
27
±10
187
1.25
-40 to +175
-40 to +175
300
260
4
A
A
V
W
W/ o C
o
o
o
o
kV
Package Marking and Ordering Information
Device Marking
FGB3236
FGI3236
Device
FGB3236_F085
FGI3236_F085
Package
TO263
TO262
Reel Size
330mm
Tube
Tape Width
24mm
NA
Quantity
800 units
50 units
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off State Characteristics
BV CER
BV CES
I CE = 2mA, V GE = 0,
Collector to Emitter Breakdown Voltage R GE = 1K ? , See Fig. 15
T J = -40 to 150 o C
I CE = 10mA, V GE = 0V,
Collector to Emitter Breakdown Voltage R GE = 0,
T J = -40 to 150 o C
330
350
363
378
390
410
V
V
BV ECS
Emitter to Collector Breakdown Voltage
I CE = -75mA, V GE = 0V,
T C = 25°C
30
-
-
V
BV GES
I CES
I ECS
R 1
R 2
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
I GES = ±2mA
V CES = 250V,
See Fig. 11
V EC = 24V,
See Fig. 11
T C = 25 o C
T C = 150 o C
T C = 25 o C
T C = 150 o C
±12
-
-
-
-
-
10K
±14
-
-
-
-
100
-
-
25
1
1
40
-
30K
V
μ A
mA
mA
?
?
On State Characteristics
T C = 150 C
V CE(SAT) Collector to Emitter Saturation Voltage I CE = 6A, V GE = 4V,
V CE(SAT) Collector to Emitter Saturation Voltage I CE = 10A, V GE = 4.5V,
V CE(SAT) Collector to Emitter Saturation Voltage I CE = 15A, V GE = 4.5V,
T C = 25 o C,
See Fig. 3
T C = 150 o C,
See Fig. 4
o
-
-
-
1.14
1.32
1.61
1.4
1.7
2.05
V
V
V
I CE(ON)
Collector to Emitter On State Current
V GE = 5V, V CE = 5V
50
-
-
A
FGB3236_F085 / FGI3236_F085 Rev. A 1
2
www.fairchildsemi.com
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