参数资料
型号: FGI3236_F085
厂商: Fairchild Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: IGBT IGNITION N-CH 360V I2PAK
产品变化通告: Product Obsolescence 13/Aug/2010
产品目录绘图: IGBT I2PAK Package
标准包装: 400
系列: EcoSPARK™
电压 - 集电极发射极击穿(最大): 360V
Vge, Ic时的最大Vce(开): 1.4V @ 4V,6A
电流 - 集电极 (Ic)(最大): 44A
功率 - 最大: 187W
输入类型: 逻辑
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: TO-262
包装: 管件
Typical Performance Curves
T J = 25 C
T J = 25 C
T J = 150 C
T J = 150 C
35
30
25
20
15
10
5
o
R G = 1K ? , V GE = 5V
o
35
30
25
20
15
10
5
o
o
R G = 1K ? , V GE = 5V
0
0
SCIS Curves valid for V clamp Voltages of <410V
20 40 60 80 100 120
140
160
0
0
SCIS Curves valid for V clamp Voltages of <410V
2 4 6 8
10
t CLP , TIME IN CLAMP ( μ S )
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
L, INDUCTANCE ( mHy )
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.25
1.20
V GE = 3.7V
I CE = 6A
1.45
1.40
I CE = 10A
1.15
V GE = 4.0V
1.35
V GE = 4.0V
V GE = 3.7V
1.10
V GE = 8V
1.30
1.05
V GE = 5V
1.25
V GE = 5V
V GE = 4.5V
T J , JUNCTION TEMPERTURE ( C )
T J , JUNCTION TEMPERTURE ( C )
V GE = 4.5V
1.00
-75 -50 -25 0 25 50 75 100 125 150 175
o
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
V GE = 8V
1.20
-75 -50 -25 0 25 50 75 100 125 150 175
o
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
50
V GE = 8.0V
50
V GE = 8.0V
V GE = 5.0V
40 V GE = 4.5V
V GE = 4.0V
V GE = 5.0V
40 V GE = 4.5V
V GE = 4.0V
30
20
10
V GE = 3.7V
30
20
10
V GE = 3.7V
T J = -40 C
T J = 25 C
0
0
o
1 2 3 4
0
0
o
1 2 3 4
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
FGB3236_F085 / FGI3236_F085 Rev. A 1
4
www.fairchildsemi.com
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