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参数资料
| 型号： | FQA10N80C_F109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 10A TO-3P |
| 产品变化通告： | Design/Process Change Notification 26/June/2007 |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 欧姆 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 58nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2800pF @ 25V |
| 功率 - 最大： | 240W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
| 其它名称： | FQA10N80C_F109-ND FQA10N80C_F109FS |
March 2014
FQA10N80C_F109
N-Channel QFET ? MOSFET
800 V, 10 A, 1.1 Ω
Features
? 10 A, 800 V, R DS(on) = 1.1 Ω (Max.) @ V GS = 10 V, I D = 5 A
? Low Gate Charge (Typ. 44 nC)
? Low Crss (Typ. 15 pF)
? 100% Avalanche Tested
? RoHS compliant
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor ’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FQA10N80C_F109
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
800
10
6.32
V
A
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
40
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
920
10
24
4.0
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
240
1.92
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
Parameter
FQA10N80C_F109
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
0.52
40
o
o
C/W
C/W
?2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C2
1
www.fairchildsemi.com
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