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参数资料
| 型号： | FQA10N80C_F109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 10A TO-3P |
| 产品变化通告： | Design/Process Change Notification 26/June/2007 |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 欧姆 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 58nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2800pF @ 25V |
| 功率 - 最大： | 240W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
| 其它名称： | FQA10N80C_F109-ND FQA10N80C_F109FS |
Package Marking and Ordering Information
Part Number
FQA10N80C_F109
Top Mark
FQA10N80C
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 800 V, V GS = 0 V
V DS = 640 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
800
--
--
--
--
--
--
0.98
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 5.0 A
V DS = 50 V, I D = 5.0 A
3.0
--
--
--
0.93
5.8
5.0
1.1
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
2150
180
15
2800
230
20
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V, I D = 10.0 A,
R G = 25 Ω
V DS = 640 V, I D = 10.0 A,
V GS = 10 V
(Note4)
(Note 4)
--
--
--
--
--
--
--
50
130
90
80
45
13.5
17
110
270
190
170
58
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
10.0
40.0
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 10.0 A
V GS = 0 V, I S = 10.0 A,
dI F / dt = 100 A/ μ s
--
--
--
--
730
10.9
1.4
--
--
V
ns
μ C
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 17.3 mH, I AS = 10 A, V DD = 50 V, R G = 25 Ω, starting T J = 25 ° C.
3. I SD ≤ 8.4 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, starting T J = 25 ° C.
4. Essentially independent of operating temperature.
?2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C2
2
www.fairchildsemi.com
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