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参数资料
| 型号： | FQI27N25TU_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 25.5A I2PAK |
| 标准包装： | 400 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 25.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 12.75A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 65nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
I DSS
I GSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
V DS = 250V, T J = 25 o C
V GS = 0V T J = 150 o C(Note 4)
V GS = ±30V
250
-
-
-
-
-
-
-
-
1
250
±100
V
μ A
uA
nA
On Characteristics
V GS(th)
r DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 25.5A, T J = 25 o C
V GS = 10V T J = 150 o C(Note 4)
3.0
-
-
4.1
108
265
5.0
131
310
V
m Ω
m Ω
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 25V, V GS = 0V,
f = 1MHz
f = 1MHz
-
-
-
-
1800
350
45
0.82
-
-
-
-
pF
pF
pF
Ω
Q g(ToT)
Q g(th)
Q gs
Q gd
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V GS = 0 to 10V
V GS = 0 to 2V
V DD = 125V
I D = 27A
-
-
-
-
45
3.3
12
23
49
4
-
-
nC
nC
nC
nC
Switching Characteristics
t on
t d(on)
Turn-On Time
Turn-On Delay Time
-
-
-
36
196
-
ns
ns
t r
t d(off)
t f
t off
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 125V, I D = 27A,
V GS = 10V, R GEN = 25 Ω
-
-
-
-
122
81
60
-
-
-
-
164
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
T rr
Q rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SD = 25.5A, V GS = 0V
I SD = 12.75A, V GS = 0V
I F = 27A, dI SD /dt = 100A/ μ s,
V DD =200V
-
-
-
-
-
-
205
1.8
1.5
1.25
238
2.3
V
V
ns
nC
Notes:
4: The maximum value is specified by design at T J = 150°C. Product is not tested to this condition in production.
FQB27N25TM_F085/QI27N25TU_F085 Rev. C1
2
www.fairchildsemi.com
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