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参数资料
| 型号： | FSB50550TB |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MODULE SPM 500V 1.2A SPM23-AC |
| 标准包装： | 15 |
| 系列： | SPM® |
| 类型： | FET |
| 配置： | 三相反相器 |
| 电流： | 1.8A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | 23-DIP 模块 |
Pin descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Pin Name
COM
V B(U)
V CC(U)
IN (UH)
IN (UL)
N.C
V B(V)
V CC(V)
IN (VH)
IN (VL)
N.C
V B(W)
V CC(W)
IN (WH)
IN (WL)
N.C
P
U, V S(U)
N U
N V
V, V S(V)
N W
W, V S(W)
Pin Description
IC Common Supply Ground
Bias Voltage for U Phase High Side MOSFET ? Driving
Bias Voltage for U Phase IC and Low Side MOSFET Driving
Signal Input for U Phase High-Side
Signal Input for U Phase Low-Side
No Connectiion
Bias Voltage for V Phase High Side MOSFET Driving
Bias Voltage for V Phase IC and Low Side MOSFET Driving
Signal Input for V Phase High-Side
Signal Input for V Phase Low-Side
No Connectiion
Bias Voltage for W Phase High Side MOSFET Driving
Bias Voltage for W Phase IC and Low Side MOSFET Driving
Signal Input for W Phase High-Side
Signal Input for W Phase Low-Side
No Connectiion
Positive DC–Link Input
Output for U Phase & Bias Voltage Ground for High Side MOSFET Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Output for V Phase & Bias Voltage Ground for High Side MOSFET Driving
Negative DC–Link Input for W Phase
Output for W Phase & Bias Voltage Ground for High Side MOSFET Driving
(1) COM
(2) V B(U)
(17) P
(3) V CC(U)
(4) IN (UH)
VCC
HIN
VB
HO
(5) IN (UL)
LIN
VS
(18) U, V S(U)
(6) NC
(7) V B(V)
COM
LO
(19) N U
(8) V CC(V)
(9) IN (VH)
(10) IN (VL)
VCC
HIN
LIN
COM
VB
HO
VS
LO
(20) N V
(21) V, V S(V)
(11) NC
(12) V B(W)
(13) V CC(W)
(14) IN (WH)
(15) IN (WL)
VCC
HIN
LIN
COM
VB
HO
VS
LO
(22) N W
(23) W, V S(W)
(16) NC
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
1st Notes:
3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM ? 5 product. External connections should be made as
indicated in Figure 3.
?2007 Fairchild Semiconductor Corporation
FSB50550T Rev. C4
3
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSB50550TB2 | 功能描述:IGBT 模块 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550U | 功能描述:IGBT 模块 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550US | 功能描述:IGBT 模块 500V, 1.2A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550UTD | 功能描述:IGBT 模块 Smart Power Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50660SF | 功能描述:分立半导体模块 Motion SPM 5 SuperFET Series RoHS:否 制造商:Fairchild Semiconductor 产品: 类型: 安装风格: 封装 / 箱体: 封装:Tube |
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