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参数资料
| 型号： | FSB50825US |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 电源模块 |
| 英文描述： | DC-DC REG PWR SUPPLY MODULE |
| 文件页数： | 1/8页 |
| 文件大小： | 297K |
| 代理商： | FSB50825US |
2008 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FSB50825US Rev. A
FSB50825US
Smart
Powe
rMod
u
le
(SPM)
October 2008
FSB50825US
Smart Power Module (SPM)
Features
250V 8A 3-phase FRFET inverter including high voltage inte-
grated circuit (HVIC)
3 divided negative dc-link terminals for inverter current sens-
ing applications
HVIC for gate driving and undervoltage protection
3/5V CMOS/TTL compatible, active-high interface
Optimized for low electromagnetic interference
Isolation voltage rating of 1500Vrms for 1min.
Surface mounted device package
Moisture Sensitive Level (MSL) 3
General Description
FSB50825US is a tiny smart power module (SPM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50825US
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50825US is the most
solution for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Rating
Units
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
250
V
ID25
Each FRFET Drain Current, Continuous
TC = 25°C
4
A
ID125
Each FRFET Drain Current, Continuous
TC = 125°C
1.6
A
IDP
Each FRFET Drain Current, Peak
TC = 25°C, PW < 100μs
8
A
PD
Maximum Power Dissipation
TC = 25°C, Each FRFET
14
W
VCC
Control Supply Voltage
Applied between VCC and COM
20
V
VBS
High-side Bias Voltage
Applied between VB(U)-U, VB(V)-V, VB(W)-W
20
V
VIN
Input Signal Voltage
Applied between IN and COM
-0.3 ~ VCC+0.3
V
TJ
Operating Junction Temperature
-40 ~ 150
°C
TSTG
Storage Temperature
-50 ~ 150
°C
RθJC
Junction to Case Thermal Resistance
Each FRFET under inverter operating con-
dition (Note 1)
8.8
°C/W
VISO
Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection pins
to heatsink
1500
Vrms
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