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参数资料
| 型号： | FSBB20CH60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 12/14页 |
| 文件大小： | 0K |
| 描述： | SMART POWER MODULE 20A SPM27-CA |
| 产品培训模块： | Smart Power |
| 产品变化通告： | Wire Bonding Change 06/April/2007 |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 20A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CA |
| 配用： | FEB154-ND - BOARD EVAL FOR FSBB20CH60 |
| 其它名称： | FSBB20CH60-ND FSBB20CH60FS FSBB20CH60_NL FSBB20CH60_NL-ND |
R E(WH)
R E(VH)
+15 V
R E(UH)
Gating WH
R BS
D BS
C BS
C BSC
(19) V B(W)
(18) V CC(WH)
(17) IN (WH)
(20) V S(W)
VB
VCC
COM
IN
OUT
VS
P (27)
W (26)
R BS
D BS
(15) V B(V)
(14) V CC(VH)
VB
Gating VH
C BS
C BSC
(13) IN (VH)
(16) V S(V)
VCC
COM
IN
OUT
VS
V (25)
M
M
C
U
Gating UH
R BS
R F
D BS
C BS
C BSC
(11) V B(U)
(10) V CC(UH)
(9) IN (UH)
(12) V S(U)
VB
VCC
COM
IN
OUT
VS
U (24)
C DCS
Vdc
+5 V
Fault
R S
R PF
C SC
C FOD
(8) C SC
(7) C FOD
(6) V FO
C(SC) OUT(WL)
C(FOD)
VFO
N W (23)
R SW
Gating WL
(5) IN (WL)
IN(WL) OUT(VL)
Gating VL
(4) IN (VL)
IN(VL)
N V (22)
R SV
(3) IN (UL)
Gating UL
(2) COM
IN(UL)
C BPF
C PF
(1) V CC(L)
COM
VCC
OUT(UL)
V SL
N U (21)
R SU
C SP15
C SPC15
Input Signal for Short-
Circuit Protection
W-Phase Current
V-Phase Current
U-Phase Current
R FW
R FV
R FU
C FW
C FV
C FU
Figure 11. Typical Application Circuit
4th Notes:
1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).
2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM ? 3 product, direct coupling to MCU terminals without any optocoupler or transformer isola-
tion is possible.
3. V FO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 k ? resistance (please refer to Figure
9).
4. C SP15 of around seven times larger than bootstrap capacitor C BS is recommended.
5. V FO output pulse width should be determined by connecting an external capacitor (C FOD ) between C FOD (pin 7) and COM (pin 2). (Example : if C FOD = 33 nF, then t FO = ???? ms
(typ.)) Please refer to the 2nd note 5 for calculation method.
6. Input signal is active-HIGH type. There is a 3.3 k ?? resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC cou-
ple that input signal agree with turn-off / turn-on threshold voltage.
7. To prevent errors of the protection function, the wiring around R F and C SC should be as short as possible.
8. In the short-circuit protection circuit, please select the R F C SC time constant in the range 1.5 ~ 2 ? s.
9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible.
10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 ? F between the P & GND pins is recommended.
11. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
12. C SPC15 should be over 1 ? F and mounted as close to the pins of the Motion SPM 3 product as possible.
?2006 Fairchild Semiconductor Corporation
FSBB20CH60 Rev. C6
12
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60C | 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60CL | 功能描述:IGBT 模块 20A, Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60CT | 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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