参数资料
型号: GS8324Z36B-150IT
厂商: GSI TECHNOLOGY
元件分类: SRAM
英文描述: 1M X 36 ZBT SRAM, 10 ns, PBGA119
封装: 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件页数: 21/46页
文件大小: 1157K
代理商: GS8324Z36B-150IT
Rev: 1.00 10/2001
28/46
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8324Z18(B/C)/GS8324Z36(B/C)/GS8324Z72(C)
AC Electrical Characteristics
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max Min Max Min Max
Pipeline
Clock Cycle Time
tKC
4.0
4.4
5.0
6.0
6.7
7.5
ns
Clock to Output Valid
tKQ
2.3
2.5
3.0
3.4
3.8
4.0
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ1
1.5
1.5
1.5
1.5
1.5
1.5
ns
Flow
Through
Clock Cycle Time
tKC
7.0
7.5
8.5
10.0
10.0
15.0
ns
Clock to Output Valid
tKQ
6.0
6.0
7.5
8.5
10.0
10.0
ns
Clock to Output Invalid
tKQX
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock to Output in Low-Z
tLZ1
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock HIGH Time
tKH
1.3
1.3
1.3
1.3
1.5
1.7
ns
Clock LOW Time
tKL
1.5
1.5
1.5
1.5
1.7
2
ns
Clock to Output in
High-Z
tHZ1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.5
1.5
3.8
1.5
4.0
ns
G to Output Valid
tOE
2.3
2.5
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ1
2.3
2.5
3.0
3.5
3.8
4.0
ns
Setup time
tS
1.5
1.5
1.5
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
0.5
0.5
0.5
ns
ZZ setup time
tZZS2
5
5
5
5
5
5
ns
ZZ hold time
tZZH2
1
1
1
1
1
1
ns
ZZ recovery
tZZR
100
100
100
100
100
100
ns
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