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参数资料
| 型号： | GS841Z36CGT-166IT |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 128K X 36 ZBT SRAM, 7 ns, PQFP100 |
| 封装： | ROHS COMPLIANT, TQFP-100 |
| 文件页数： | 5/28页 |
| 文件大小： | 250K |
| 代理商： | GS841Z36CGT-166IT |
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GS841Z18CGT/GS841Z36CGT
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 8/2011
13/28
2011, GSI Technology
VDD2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
Input Low Voltage
VIL
–
0.3
—
0.3*VDD
V
Note:
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Junction Temperature
(Commercial Range Versions)
TJ
025
85
C
Junction Temperature
(Industrial Range Versions)*
TJ
–40
25
100
C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Thermal Impedance
Package
Test PCB
Substrate
JA (C°/W)
Airflow = 0 m/s
JA (C°/W)
Airflow = 1 m/s
JA (C°/W)
Airflow = 2 m/s
JB (C°/W)
JC (C°/W)
100 TQFP
4-layer
28.3
27.2
25.4
—
7.1
Notes:
1. Thermal Impedance data is based on a number of samples from mulitple lots and should be viewed as a typical number.
2. Please refer to JEDEC standard JESD51-6.
3. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to
the PCB can result in cooling or heating of the RAM depending on PCB temperature.
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
Note:
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GS841Z36CGT-200 | 制造商:GSI Technology 功能描述:100 TQFP - Bulk |
| GS842Z18AB | 制造商:GSI 制造商全称:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS842Z18AB-100 | 制造商:GSI 制造商全称:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS842Z18AB-100I | 制造商:GSI 制造商全称:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS842Z18AB-150 | 制造商:GSI 制造商全称:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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