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参数资料
| 型号： | GS842Z18CB-250T |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 256K X 18 ZBT SRAM, 5.5 ns, PBGA119 |
| 封装： | FPBGA-119 |
| 文件页数： | 2/29页 |
| 文件大小： | 248K |
| 代理商： | GS842Z18CB-250T |
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GS842Z18CB/GS842Z36CB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 8/2011
10/29
2011, GSI Technology
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
Read to Write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, interleaved burst sequence is selected. See the tables
below for details.
FLXDrive
The ZQ pin allows selection between NBT RAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive
strength (ZQ floating or high) point-to-point applications. See the Output Driver Characteristics chart for details.
Note:
There are pull-up devices on the ZQ and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip
will operate in the default states as specified in the above tables.
Mode Pin Functions
Mode Name
Pin Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, IDD = ISB
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
相关PDF资料 |
PDF描述 |
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| GS8641ZV18GE-200 | 4M X 18 ZBT SRAM, 7.5 ns, PBGA165 |
| GS8644Z18GE-225T | 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 |
| GS8662QT10BD-200I | 8M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| GS8662QT10BGD-250T | 8M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| GS8662T06BD-350I | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS842Z18CGB-100 | 制造商:GSI Technology 功能描述:119 BGA - Bulk |
| GS842Z36AB-100 | 制造商:GSI 制造商全称:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS842Z36AB-100I | 制造商:GSI 制造商全称:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS842Z36AB-150 | 制造商:GSI 制造商全称:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS842Z36AB-150I | 制造商:GSI 制造商全称:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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