- 您现在的位置：买卖IC网 > PDF目录223866 > GS8644Z18GE-225T (GSI TECHNOLOGY) 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 PDF资料下载
参数资料
| 型号： | GS8644Z18GE-225T |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 |
| 封装： | 17 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件页数： | 3/31页 |
| 文件大小： | 1172K |
| 代理商： | GS8644Z18GE-225T |
第1页第2页当前第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
GS8644Z18E/GS8644Z36E
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05b 5/2010
11/31
2003, GSI Technology
Burst Counter Sequences
BPR 1999.05.18
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after 2 cycles of wake up time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
tZZR
tZZH
tZZS
tKL
tKH
tKC
CK
ZZ
Designing for Compatibility
The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal. Not
all vendors offer this option, however most mark the pin VDD or VDDQ on pipelined parts and VSS on flow through parts. GSI NBT
SRAMs are fully compatible with these sockets. Other vendors mark the pin as a No Connect (NC). GSI RAMs have an internal
pull-up device on the FT pin so a floating FT pin will result in pipelined operation. If the part being replaced is a pipelined mode
part, the GSI RAM is fully compatible with these sockets. In the unlikely event the part being replaced is a Flow Through device,
the pin will need to be pulled low for correct operation.
相关PDF资料 |
PDF描述 |
|---|---|
| GS8662QT10BD-200I | 8M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| GS8662QT10BGD-250T | 8M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| GS8662T06BD-350I | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| GS8662T06BD-350T | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| GS8672Q38BE-500I | 2M X 36 QDR SRAM, 0.45 ns, PBGA165 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8644Z36 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z36B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z36B-133 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z36B-133I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z36B-150 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
发布紧急采购，3分钟左右您将得到回复。