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参数资料
| 型号： | GS8644Z18GE-225T |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 |
| 封装： | 17 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件页数： | 5/31页 |
| 文件大小： | 1172K |
| 代理商： | GS8644Z18GE-225T |
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GS8644Z18E/GS8644Z36E
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05b 5/2010
13/31
2003, GSI Technology
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V
1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C
2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
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相关代理商/技术参数 |
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| GS8644Z36 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z36B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z36B-133 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z36B-133I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644Z36B-150 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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