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参数资料
| 型号： | GTS217E |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 310K |
| 代理商： | GTS217E |
GTS217E
Page: 2/4
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
0.5
-
1.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
24
-
S
VDS=5V, ID=7A
Gate-Source Leakage Current
IGSS
-
±10
uA
VGS= ±10V
Drain-Source Leakage Current(Tj=25 : )
-
1
uA
VDS=16V, VGS=0
Drain-Source Leakage Current(Tj=55 : )
IDSS
-
5
uA
VDS=16V, VGS=0
-
22
VGS=4.5V, ID=6.6A
Static Drain-Source On-Resistance
RDS(ON)
-
30
m
VGS=2.5V, ID=5.5A
Total Gate Charge2
Qg
-
9.3
-
Gate-Source Charge
Qgs
-
0.6
-
Gate-Drain (“Miller”) Change
Qgd
-
3.6
-
nC
ID=7A
VDS=10V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
820
-
Rise Time
Tr
-
934
-
Turn-off Delay Time
Td(off)
-
860
-
Fall Time
Tf
-
510
-
ns
VDS=10V
ID=1A
VGS=4.5V
RG=6
RL=10
Input Capacitance
Ciss
-
231
Output Capacitance
Coss
-
164
-
Reverse Transfer Capacitance
Crss
-
137
-
pF
VGS=0V
VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.0
V
IS=1.0A, VGS=0V
Reverse Recovery Time2
Trr
-
15.2
-
ns
Reverse Recovery Charge
Qrr
-
6.3
-
nC
IS=7A, VGS=0V
dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
2.5
A
VD=VG=0V, VS=1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
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