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| 型号： | GTS217E |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 4/4页 |
| 文件大小： | 310K |
| 代理商： | GTS217E |
GTS217E
Page: 4/4
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
v.s. Junction Temperature
Fig 9. Gate Charge Characteristics
Fig 10. Normalized Maximum Transient Thermal Impedance
Curve
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| GTS-2C-12D | 制造商:M.E.C. Relays 功能描述: |
| GTS-2C-24A | 制造商:M.E.C. Relays 功能描述: |
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