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参数资料
| 型号： | HGTG12N60C3D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V 24A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.2V @ 15V，15A |
| 电流 - 集电极 (Ic)（最大）： | 24A |
| 功率 - 最大： | 104W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
HGTG12N60C3D
Electrical Speci?cations
T C = 25 o C, Unless Otherwise Speci?ed (Continued)
PARAMETER
Diode Reverse Recovery Time
Thermal Resistance
SYMBOL
t rr
R θ JC
TEST CONDITIONS
I EC = 12A, dI EC /dt = 100A/ μ s
I EC = 1.0A, dI EC /dt = 100A/ μ s
IGBT
Diode
MIN
-
-
-
-
TYP
34
30
-
-
MAX
42
37
1.2
1.5
UNITS
ns
ns
o C/W
o C/W
NOTE:
3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
at the point where the collector current equals zero (I CE = 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Typical Performance Curves
80
70
DUTY CYCLE <0.5%, V CE = 10V
PULSE DURATION = 250 μ s
80
70
PULSE DURATION = 250 μ s, DUTY CYCLE <0.5%, T C = 25 o C
V GE = 15.0V
12.0V
60
60
50
T C = 150 o C
50
10.0V
40
T C = 25 o C
40
30
20
10
T C = -40 o C
30
20
10
9.0V
8.5V
8.0V
0
4
6
8
10
12
14
0
0
7.0V
2 4 6 8
7.5V
10
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
80
70
PULSE DURATION = 250 μ s
DUTY CYCLE <0.5%, V GE = 10V
80
70
PULSE DURATION = 250 μ s
DUTY CYCLE <0.5%, V GE = 15V
60
50
60
50
T C = -40 o C
T C = 25 o C
40
30
20
10
T C = -40 o C
T C = 150 o C
T C = 25 o C
40
30
20
10
T C = 150 o C
0
0
1
2
3
4
5
0
0
1 2 3 4
5
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
?2001 Fairchild Semiconductor Corporation
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG12N60C3D Rev. B
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