参数资料
型号: HGTG12N60C3D
厂商: Fairchild Semiconductor
文件页数: 6/8页
文件大小: 0K
描述: IGBT UFS N-CHAN 600V 24A TO-247
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Lead Frame Change 20/Dec/2007
标准包装: 150
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.2V @ 15V,15A
电流 - 集电极 (Ic)(最大): 24A
功率 - 最大: 104W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
HGTG12N60C3D
Typical Performance Curves
10 0
0.5
0.2
0.1
(Continued)
t 1
10 -1
0.05
P D
t 2
0.02
10 -2
0.01
SINGLE PULSE
DUTY FACTOR, D = t 1 / t 2
PEAK T J = (P D X Z θ JC X R θ JC ) + T C
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t 1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
50
40
40
30
T C = 25 o C, dI EC /dt = 100A/ μ s
trr
30
100 o C
20
ta
20
10
0
150 o C
25 o C
10
0
tb
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
V EC , FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
Test Circuit and Waveform
L = 100 μ H
I EC , FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
90%
RHRP1560
V GE
10%
R G = 25 ?
+
V CE
90%
E OFF
E ON
-
V DD = 480V
I CE
10%
t d(OFF)I
t fI
t rI
t d(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
?2001 Fairchild Semiconductor Corporation
FIGURE 21. SWITCHING TEST WAVEFORMS
HGTG12N60C3D Rev. B
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