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参数资料
| 型号： | HGTG12N60C3D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V 24A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.2V @ 15V，15A |
| 电流 - 集电极 (Ic)（最大）： | 24A |
| 功率 - 最大： | 104W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
HGTG12N60C3D
Typical Performance Curves
(Continued)
2.0
T J = 150 o C, R G = 25 ? , L = 100 μ H, V CE(PK) = 480V
3.0
T J = 150 o C, R G = 25 ? , L = 100 μ H, V CE(PK) = 480V
2.5
1.5
2.0
V GE = 10V
1.0
V GE = 15V
1.5
1.0
V GE = 10V OR 15V
0.5
0.5
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
100
T J = 150 o C, T C = 75 o C
R G = 25 ? , L = 100 μ H
100
80
T J = 150 o C, V GE = 15V, R G = 25 ? , L = 100 μ H
V GE = 10V
V GE = 15V
60
LIMITED BY
10
f MAX1 = 0.05/(t D(OFF)I + t D(ON)I )
f MAX2 = (P D - P C )/(E ON + E OFF )
40
CIRCUIT
P D = ALLOWABLE DISSIPATION
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R θ JC = 1.2 o C/W
20
1
5
10
20
30
0
0
100
200
300
400
500
600
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
V CE(PK) , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500
2000
1500
1000
C IES
FREQUENCY = 1MHz
600
480
360
240
I G(REF) = 1.276mA, R L = 50 ? , T C = 25 o C
V CE = 600V
V CE = 400V
15
12
9
6
500
C RES
C OES
120
V CE = 200V
3
0
0
5
10
15
20
25
0
0
10
20 30 40
50
60
0
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
?2001 Fairchild Semiconductor Corporation
Q G , GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
HGTG12N60C3D Rev. B
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