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参数资料
| 型号： | HGTG12N60C3D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V 24A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.2V @ 15V，15A |
| 电流 - 集电极 (Ic)（最大）： | 24A |
| 功率 - 最大： | 104W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
HGTG12N60C3D
Typical Performance Curves
(Continued)
25
20
V GE = 15V
20
V CE = 360V, R G = 25 ? , T J = 125 o C
I SC
140
120
15
100
15
80
10
5
10
t SC
60
40
0
25
50
75 100 125
150
5
10
11
12
13
14
20
15
T C , CASE TEMPERATURE ( o C)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
100
T J = 150 o C, R G = 25 ? , L = 100 μ H, V CE(PK) = 480V
400
300
T J = 150 o C, R G = 25 ? , L = 100mH, V CE(PK) = 480V
V GE = 15V
50
30
V GE = 10V
200
V GE = 10V
20
10
V GE = 15V
100
5
10
15
20
25
30
5
10
15
20
25
30
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
T J = 150 o C, R G = 25 ? , L = 100 μ H, V CE(PK) = 480V
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
T J = 150 o C, R G = 25 ? , L = 100 μ H, V CE(PK) = 480V
100
V GE = 10V
200
V GE = 10V or 15V
V GE = 15V
10
5
100
90
80
5
10
15
20
25
30
5
10
15
20
25
30
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
?2001 Fairchild Semiconductor Corporation
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG12N60C3D Rev. B
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