HI-SINCERITY
MICROELECTRONICS CORP.
HTIP102
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6734
Issued Date : 1995.02.08
Revised Date : 2002.02.26
Page No. : 1/4
HTIP102
HSMC Product Specification
Description
The HTIP102 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 80 W
Total Power Dissipation (Ta=25
°
C)................................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current........................................................................................................................... 8 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Cob
Min.
100
100
-
-
-
-
-
-
1
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
50
50
8
2
2.5
2.8
20
-
200
Unit
V
V
uA
uA
mA
V
V
V
K
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
VCB=100V, IE=0
VCE=50V, IB=0
VEB=5V, IC=0
IC=3A, IB=6mA
IC=8A, IB=80mA
IC=8A, VCE=4V
IC=3A, VCE=4V
IC=8A, VCE=4V
VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
Darlington Schematic
R2
R1
C
E
B
TO-220