参数资料
型号: HUF75345S3
厂商: Fairchild Semiconductor
文件页数: 10/11页
文件大小: 0K
描述: MOSFET N-CH 55V 75A D2PAK
标准包装: 400
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 7 毫欧 @ 75A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 275nC @ 20V
输入电容 (Ciss) @ Vds: 4000pF @ 25V
功率 - 最大: 325W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D²PAK
包装: 管件
HUF75345G3, HUF75345P3, HUF75345S3S
Mechanical Dimensions
TO-220 3L
Figure 20 . TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
?2009 Fairchild Semiconductor Corporation
HUF75345G3, HUF75345P3, HUF75345S3S Rev. C0
相关PDF资料
PDF描述
HUF75542P3 MOSFET N-CH 80V 75A TO-220AB
HUF75545S3 MOSFET N-CH 80V 75A TO-262AA
HUF75631P3 MOSFET N-CH 100V 33A TO-220AB
HUF75639S3 MOSFET N-CH 100V 56A TO-262AA
HUF75645S3S MOSFET N-CH 100V 75A D2PAK
相关代理商/技术参数
参数描述
HUF75345S3S 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75345S3ST 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75345S3ST_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75531SK8 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75531SK8T 功能描述:MOSFET 6a 80V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube